Atomic Layer Deposition for Semiconductors /

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Bibliographic Details
Imprint:New York : Springer, 2014.
Description:1 online resource (x, 263 pages) : illustrations (some color)
Language:English
Subject:
Format: E-Resource Book
URL for this record:http://pi.lib.uchicago.edu/1001/cat/bib/11081623
Hidden Bibliographic Details
Other authors / contributors:Seong Hwang, Cheol, editor.
Yoo, Cha Young, editor.
ISBN:9781461480549
146148054X
9781461480532
1461480531
9781461480532
Notes:Includes index.
Includes bibliographical references and index.
Online resource; title from PDF title page (SpringerLink, viewed October 21, 2013).
Summary:Atomic Layer Deposition (ALD) was originally designed for depositing uniform passivation layers over a very large area for display devices in the late 1970s. Only recently, in the 21st century, has the this technique become popular for high integrated semiconductor memory devices. This book discusses ALD for all modern semiconductor devices, the basic chemistry of ALD, and models of ALD processes. The book also details ALD for both mass produced memories and emerging memories. Each chapter of the book provides history, operating principles, and a full explanation of ALD processes for each device.
Standard no.:10.1007/978-1-4614-8054-9

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