Radiation hardened CMOS integrated circuits for time-based signal processing /

Radiation hardened CMOS integrated circuits for time-based signal processing /

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Bibliographic Details
Author / Creator:Prinzie, Jeffrey, author.
Imprint:Cham, Switzerland : Springer, 2018.
Description:1 online resource
Language:English
Series:Analog circuits and signal processing, 1872-082X
Analog circuits and signal processing series.
Subject:
Metal oxide semiconductors, Complementary.
Integrated circuits.
Integrated circuits.
Metal oxide semiconductors, Complementary.
Format: E-Resource Book
URL for this record:http://pi.lib.uchicago.edu/1001/cat/bib/11654539
Hidden Bibliographic Details
Other authors / contributors:Steyaert, Michiel, 1959- author.
Leroux, Paul, 1975- author.
ISBN:9783319786162
3319786164
9783319786155
3319786156
Digital file characteristics:text file PDF
Notes:Includes bibliographical references and index.
Online resource; title from PDF title page (SpringerLink, viewed May 2, 2018).
Summary:This book presents state-of-the-art techniques for radiation hardened high-resolution Time-to-Digital converters and low noise frequency synthesizers. Throughout the book, advanced degradation mechanisms and error sources are discussed and several ways to prevent such errors are presented. An overview of the prerequisite physics of nuclear interactions is given that has been compiled in an easy to understand chapter. The book is structured in a way that different hardening techniques and solutions are supported by theory and experimental data with their various tradeoffs. Based on leading-edge research, conducted in collaboration between KU Leuven and CERN, the European Center for Nuclear Research Describes in detail advanced techniques to harden circuits against ionizing radiation Provides a practical way to learn and understand radiation effects in time-based circuits Includes an introduction to the underlying physics, circuit design, and advanced techniques accompanied with experimental data.
Other form:Print version: Prinzie, Jeffrey. Radiation hardened CMOS integrated circuits for time-based signal processing. Cham, Switzerland : Springer, 2018 3319786156 9783319786155
Standard no.:10.1007/978-3-319-78616-2
Table of Contents:
  • Intro; Preface; Contents; List of Abbreviations and Symbols; Abbreviations; Symbols; List of Figures; List of Tables; 1 Radiation Effects in CMOS Technology; 1.1 Radiation and Its Interaction with Matter; 1.1.1 Direct Ionization; 1.1.2 Electromagnetic Radiation; 1.1.3 Neutrons; 1.1.4 Effects on Semiconductors; 1.2 Total Ionizing Dose Effects; 1.2.1 Basic Charge Trapping in CMOS Transistors; 1.2.2 Narrow Channel Transistors; 1.2.3 Short Channel Transistors; 1.2.4 Enclosed Layout Transistors; 1.2.5 Experimental Results; 1.3 Single-Event Effects; 1.3.1 Basic Mechanism.
  • 1.3.2 Effect on nmos and pmos Devices1.3.3 SET, SEU, SEL; 1.3.4 SEU Mitigation Techniques in Digital Blocks; 1.3.5 Charge Sharing; 1.4 Simulation Methods to Simulate Radiation Effects; 1.4.1 Simulation of TID Effects on Circuits; 1.4.2 Simulation of Single-Event Effects on Circuits; 1.5 Conclusion; 2 Time-Domain Signal Processing; 2.1 Introduction; 2.2 Time-to-Digital Converters; 2.3 Applications of Time-Based Circuits; 2.3.1 High-Energy Physics; 2.3.2 PET Scanners; 2.3.3 Time-of-Flight LIDAR; 2.3.4 All-Digital PLLs; 2.4 TDC Circuits; 2.4.1 Performance Parameters.
  • 2.4.1.1 Single-Shot Precision2.4.1.2 Linearity; 2.4.1.3 Gain Error; 2.4.1.4 Conversion Speed; 2.4.2 Delay-Line Based TDCs; 2.4.3 Sub-gate Delay-Line TDCs; 2.4.3.1 Vernier Architecture; 2.4.3.2 Local Phase Interpolation; 2.4.3.3 Parallel TDCs; 2.4.4 Delay-Locked Loops; 2.4.5 Multi-Stage TDCs; 2.4.5.1 Coarse-Fine TDCs; 2.4.5.2 Pipelined TDCs; 2.4.6 Looped TDCs; 2.4.7 Oversampling TDCs; 2.4.7.1 Gated Ring-Oscillator; 2.4.8 Other TDC Architectures; 2.4.8.1 Stochastic TDCs; 2.4.8.2 Wave Union Launcher; 2.4.9 Input Path; 2.5 Conclusion; 3 Clock Synthesizers; 3.1 Introduction; 3.2 Phase Locked Loops.
  • 3.2.1 Phase-Domain Model3.2.2 Components for Charge-Pump PLLs; 3.2.2.1 Phase Detector; 3.2.2.2 Phase-Frequency Detector; 3.2.2.3 Bang-Bang Phase Detector; 3.2.2.4 Charge-Pump: Loop Filter; 3.2.2.5 Divider; 3.3 Oscillators; 3.3.1 Oscillation Criteria; 3.3.2 LC-Oscillators; 3.3.3 Ring-Oscillators; 3.4 Jitter and Phase-Noise; 3.4.1 Definitions; 3.4.2 Phase Noise in LC-Tank Oscillators; 3.4.2.1 Linear Calculation; 3.4.2.2 Impulse Sensitive Function; 3.4.3 Phase Noise Spectrum of an Oscillator; 3.5 Phase-Noise in PLLs; 3.5.1 Noise Transfer Function; 3.5.2 Reference Clock Phase Noise.
  • 3.5.3 Charge-Pump: Loop Filter3.5.4 Oscillator; 3.5.5 Spurious Tones; 3.6 Performance Parameters; 3.7 Conclusion; 4 Single Shot Time-to-Digital Converters; 4.1 Introduction; 4.2 TDC System Level Architecture; 4.2.1 Self-Calibration Loop Implemented by a DLL; 4.2.2 System Architecture with Double Phase Detector; 4.2.3 TDC Timing Generator Linearity; 4.2.4 Channeling and Basic Readout Interfaces; 4.3 Low Offset Bang-Bang Phase Detector; 4.3.1 Origin of Static Phase Offsets; 4.3.2 Removing Static Phase Offsets; 4.3.3 Circuit Implementations; 4.4 Experimental Results; 4.5 Conclusion.

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