Lithium niobate-based heterostructures : synthesis, properties and electron phenomena /
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Author / Creator: | Sumets, Maxim, author. |
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Imprint: | Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) : IOP Publishing, [2018] |
Description: | 1 online resource (various pagings) : illustrations (some color). |
Language: | English |
Series: | [IOP release 5] IOP expanding physics, 2053-2563 IOP (Series). Release 5. IOP expanding physics. |
Subject: | |
Format: | E-Resource Book |
URL for this record: | http://pi.lib.uchicago.edu/1001/cat/bib/11694596 |
Table of Contents:
- 1. Thin films of lithium niobate : potential applications, synthesis methods, structure and properties
- 1.1. The structure and main properties of bulk lithium niobate
- 1.2. Application of thin LiNbO3 films
- 1.3. Fabrication methods of thin LiNbO3 films
- 1.4. Fundamentals of RFMS method, an ion-beam sputtering method and their critical parameters
- 1.5. Electrical properties and charge transport phenomena in LiNbO3-based heterostructures
- 2. Synthesis, structure and surface morphology of LiNbO3 films
- 2.1. Technological regimes of the synthesis of thin LiNbO3 films by radiofrequency magnetron sputtering and ion-beam sputtering methods
- 2.2. Composition, structure and surface morphology of LiNbO3 films
- 2.3. Influence of the synthesis regimes and subsequent annealing on composition and structural properties of LiNbO3 films
- 3. Electron phenomena in LiNbO3-based heterostructures
- 3.1. Basic electrical properties of LiNbO3 thin films in Si-LiNbO3 heterosystems
- 3.2. Conduction mechanisms in (001)Si-LiNbO3 heterostructures
- 3.3. Band diagram of the Si-LiNbO3 heterostructures
- 3.4. Impedance spectroscopy and ac conductivity of thin LiNbO3 films
- 4. Effect of sputtering conditions and thermal annealing on electron phenomena in the Si-LiNbO3 heterostructures
- 4.1. Effect of the spatial plasma inhomogeneity, composition and relative target-substrate position on electrical properties of Si-LiNbO3 heterostructures
- 4.2. Thermal annealing effect on electrical properties of Si-LiNbO3 heterosystem
- 4.3. Impedance spectroscopy of Si-LiNbO3-Al heterostructures after thermal annealing
- 4.4. Optical band gap shift in thin LiNbO3 films depending on RFMS conditions and subsequent thermal annealing
- 4.5. Temperature transition of p- to n-type conduction in the LiNbO3/Nb2O5 polycrystalline films fabricated in an Ar + O2 reactive gas environment
- Appendix A. Cell parameters and powder x-ray diffraction data of LiNbO3 [1], LiNb3O8 [2], Li3NbO4 [3] and Nb2O5 [4].