Formation of KNbO3 Thin Films for Self-Powered ReRAM Devices and Artificial Synapses /
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| Author / Creator: | Yi, T'ae-ho, author. |
|---|---|
| Imprint: | Singapore : Springer, [2018] ©2018 |
| Description: | 1 online resource |
| Language: | English |
| Series: | Springer theses Springer theses. |
| Subject: | |
| Format: | E-Resource Book |
| URL for this record: | http://pi.lib.uchicago.edu/1001/cat/bib/11706061 |
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| 245 | 1 | 0 | |a Formation of KNbO3 Thin Films for Self-Powered ReRAM Devices and Artificial Synapses / |c Tae-Ho Lee. |
| 264 | 1 | |a Singapore : |b Springer, |c [2018] | |
| 264 | 4 | |c ©2018 | |
| 300 | |a 1 online resource | ||
| 336 | |a text |b txt |2 rdacontent | ||
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| 490 | 1 | |a Springer theses | |
| 500 | |a "Doctoral Thesis accepted by Korea University, Seoul, Korea (Republic of)." | ||
| 588 | |a Online resource; title from PDF title page (EBSCO, viewed September 19, 2018). | ||
| 504 | |a Includes bibliographical references. | ||
| 520 | |a "This thesis describes an investigation into homogeneous KN crystalline films grown on Pt/Ti/SiO2/Si substrates, amorphous KN films grown on TiN/Si substrates using the RF-sputtering method, and the ferroelectic and piezoelectric properties of these KN films. KNbO3 (KN) thin films have been extensively investigated for applications in nonlinear optical, electro-optical and piezoelectric devices. However, the electrical properties of KN films have not yet been reported, because it is difficult to grow stoichiometric KN thin films due to K2O evaporation during growth. This thesis also reports on the ReRAM properties of a biocompatible KN ReRAM memristor powered by the KN nanogenerator, and finally shows the biological synaptic properties of the KN memristor for application to the artificial synapse of a neuromorphic computing system."-- |c Provided by publisher. | ||
| 505 | 0 | |a Intro; Supervisor's Foreword; Abstract; Parts of this thesis have been published in the following articles:; Acknowledgements; Contents; List of Figures; List of Tables; 1 Introduction; References; 2 Literature Survey; 2.1 Lead-Free Piezoelectric Ceramics; 2.1.1 KN-Based Thin Films; 2.1.1.1 Necessity of KN-Based Thin Films; 2.1.1.2 Technological Requirement for KN-Based Thin Films; 2.1.2 Electrical Properties of KN Thin Film; 2.1.2.1 Capacitance Density; 2.1.2.2 Dielectric Loss; 2.1.2.3 Leakage Current Density; 2.1.2.4 Leakage Current Mechanism; 2.1.2.5 Piezoelectric Coefficient d33 | |
| 505 | 8 | |a 2.2 Memristor-Based Neuromorphic System2.2.1 Limits of Conventional Digital Computation; 2.2.2 Neuromorphic Computing; 2.2.2.1 Artificial Neural Networks; 2.2.2.2 Basic Principle; 2.2.2.3 Neuromorphic Computation Using VLSI (Very-Large-Scale Integration); 2.2.3 Human Brain; 2.2.3.1 Neurons; 2.2.3.2 Synapses; 2.2.3.3 Synaptic Plasticity; 2.2.3.4 Synaptic Metaplasticity; 2.3 Memristor as Artificial Synapses; 2.3.1 Memristor; 2.3.1.1 Definition; 2.3.1.2 Memristor Types; 2.3.1.3 ReRAM-Based Memristor; 2.3.2 Memristor Based Neural Networks; 2.4 Piezoelectric Nanogenerators | |
| 505 | 8 | |a 2.4.1 Piezoelectric Energy Harvesting2.4.2 Piezoelectric Nanogenerator; References; 3 Experimental Procedure; 3.1 Preparation of KN Sputtering Target; 3.1.1 Synthesis of KN Compound; 3.1.2 Sintering of KN Ceramic Target; 3.2 Experiments of KN Thin Films; 3.2.1 Growth of KN Films; 3.2.2 Analysis of Structural and Electrical Properties of KN Thin Films; 3.2.2.1 Crystal and Microstructure and Surface Morphology; 3.2.2.2 Dielectric Properties; 3.2.2.3 I-V Characteristics; 3.2.2.4 P-E Hysteresis Curve and Piezoelectric Constant d33; 3.3 KNbO3 ReRAM Devices | |
| 505 | 8 | |a 3.3.1 Fabrication Pt/KN/TiN/SiO2/Si Devices3.3.2 Device Measurements; 3.3.2.1 Structural Characteristics; 3.3.2.2 Electrical Characteristics; Spike-Timing Dependent Plasticity Characteristics (STDP); 3.4 KNbO3 Piezoelectric Nanogenerators; 3.4.1 Fabrication of KN Piezoelectric Nanogenerators; 3.4.2 Device Measurements; 3.5 Biocompatibility Assessment of KN Film; Reference; 4 Results and Discussion; 4.1 Growth Behavior of KN Thin Films; 4.1.1 X-Ray Diffraction Patterns; 4.1.2 SEM/EDX Analysis and Auger Depth Profile; 4.1.3 Electrical Properties of KN Thin Films | |
| 505 | 8 | |a 4.1.3.1 Dielectric Properties and I-V Characteristic of KN Thin Films4.1.3.2 Polarization Characteristic and d33 Values of KN Thin Films; 4.2 KNbO3-Based ReRAM Devices; 4.2.1 KNbO3/TiN/SiO2/Si ReRAM Devices; 4.2.1.1 Structural Properties of KN Films; 4.2.1.2 Structural and Chemical Analysis on the Surface of the KN Films; 4.2.1.3 Nanocrystal of KN Films; 4.2.1.4 Resistive Switching and Reliability Characteristics of KN Films; 4.2.1.5 Dielectric and Piezoelectric Properties; 4.2.2 Current Conduction Mechanisms; 4.2.2.1 Variations of the RHRS and RLRS with the Size of the ReRAM Device | |
| 650 | 0 | |a Thin films |x Electric properties. |0 http://id.loc.gov/authorities/subjects/sh85134865 | |
| 650 | 0 | |a Thin film devices. |0 http://id.loc.gov/authorities/subjects/sh85134863 | |
| 650 | 0 | |a Crystal growth. |0 http://id.loc.gov/authorities/subjects/sh85034507 | |
| 650 | 0 | |a Random access memory. |0 http://id.loc.gov/authorities/subjects/sh85111346 | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Mechanical. |2 bisacsh | |
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| 776 | 0 | 8 | |i Print version: |a Yi, T'ae-ho. |t Formation of KNbO3 Thin Films for Self-Powered ReRAM Devices and Artificial Synapses. |d Singapore : Springer, [2018] |z 9811325340 |z 9789811325342 |w (OCoLC)1048116769 |
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