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20240814220142.8 |
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931116s1993 enka 001 0 eng |
| 010 |
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|a 92032384
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| 020 |
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|a 0198539797 :
|c $37.50
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|a (ICU)BID17618312
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| 035 |
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|a (OCoLC)26672389
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| 040 |
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|c DLC
|d DLC
|d OrLoB
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| 050 |
0 |
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|a QC176.8.E4
|b M66 1993
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| 082 |
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|a 530.4/16
|2 20
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| 100 |
1 |
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|a Mott, N. F.
|q (Nevill Francis),
|c Sir,
|d 1905-1996.
|1 https://id.oclc.org/worldcat/entity/E39PBJcgxw8KFX7rx3QqxyTGpP
|1 http://viaf.org/viaf/49307037
|
| 245 |
1 |
0 |
|a Conduction in non-crystalline materials /
|c Neville Mott.
|
| 250 |
|
|
|a 2nd ed.
|
| 260 |
|
|
|a Oxford :
|b Clarendon Press ;
|a Oxford ;
|a New York :
|b Oxford University Press,
|c 1993.
|
| 300 |
|
|
|a ix, 150 p. :
|b ill. ;
|c 24 cm.
|
| 336 |
|
|
|a text
|b txt
|2 rdacontent
|0 http://id.loc.gov/vocabulary/contentTypes/txt
|
| 337 |
|
|
|a unmediated
|b n
|2 rdamedia
|0 http://id.loc.gov/vocabulary/mediaTypes/n
|
| 338 |
|
|
|a volume
|b nc
|2 rdacarrier
|0 http://id.loc.gov/vocabulary/carriers/nc
|
| 440 |
|
0 |
|a Oxford science publications
|
| 504 |
|
|
|a Includes bibliographical references (p. [134]-144) and indexes.
|
| 505 |
2 |
0 |
|g 1.
|t Introduction --
|g 2.
|t Transport in liquid and amorphous metals; weak-scattering systems.
|g 2.2.
|t Liquid metals.
|g 2.3.
|t Mobility of electrons in liquid rare gases.
|g 2.4.
|t Amorphous metals and metallic glasses; weak-scattering theory --
|g 3.
|t Short mean free paths and Anderson localization.
|g 3.1.
|t The Kubo-Greenwood formula.
|g 3.2.
|t Anderson localization and the mobility edge.
|g 3.3.
|t The localization length for energies above E[subscript c].
|g 3.4.
|t Can localized and extended states coexist at the same energies?
|g 3.5.
|t Hopping conduction.
|g 3.6.
|t Conduction in granular metals.
|g 3.7.
|t Weak localization.
|g 3.8.
|t Percolation transitions; metal-rare gas systems.
|g 3.9.
|t The scaling theory of Abrahams et al.
|g 3.10.
|t Minimum metallic conductivity and the effect of magnetic fields.
|g 3.11.
|t Thermopower --
|g 4.
|t Heavily doped semiconductors.
|g 4.1.
|t Uncompensated semiconductors; the Mott and Anderson transitions.
|g 4.2.
|t Impurity conduction; the observed behaviour --
|g 5.
|t Effect of long-range interaction between electrons on the electrical properties of a Fermi glass.
|g 5.1.
|t The Altshuler-Aronov correction.
|g 5.2.
|t The T[superscript 1/3] behaviour near the transition.
|g 5.3.
|t Deduction of the Altshuler-Aronov correction term in the density of states.
|g 5.4.
|t The values v = 1 and v = 1/2 of the index.
|g 5.5.
|t Effects of interaction in amorphous metals --
|g 6.
|t Polarons.
|g 6.2.
|t The Holstein polaron.
|g 6.3.
|t Polarons in ionic crystals.
|g 6.4.
|t Observations of small polarons.
|g 6.5.
|t The rate of formation of polarons.
|g 6.6.
|t Bipolarons.
|g 6.7.
|t Polarons in non-crystalline materials.
|g 6.8.
|t Spin polarons --
|g 7.
|t Non-crystalline semiconductors.
|g 7.2.
|t States in the gap; hydrogenation and doping.
|g 7.3.
|t Experimental investigation of the density of states in the gap.
|g 7.4.
|t Conductivity and thermopower.
|g 7.5.
|t Drift mobility.
|g 7.6.
|t Chalcogenides; valence alternation pairs.
|g 7.7.
|t Photoconduction and recombination --
|g 8.
|t Liquid semiconductors and metal-insulator transitions in liquids.
|g 8.2.
|t Fluid mercury.
|g 8.3.
|t The absence of quantum interference.
|g 8.4.
|t Comparison between alkali metal vapour and metal-ammonia solutions --
|g 9.
|t Vitreous silicon dioxide.
|g 9.1.
|t Electronic structure.
|g 9.2.
|t Defects.
|g 9.3.
|t Oxidation of silicon --
|g 10.
|t Quasi-amorphous semiconductors --
|g 11.
|t Two-dimensional problems.
|g 11.2.
|t Inversion layers.
|g 11.3.
|t Localization in two dimensions.
|g 11.4.
|t Delta layers.
|g 11.5.
|t Quantum Hall effect --
|g 12.
|t High-temperature superconductors.
|g 12.2.
|t A model for copper oxide superconductors.
|g 12.3.
|t A model for the electrical properties above T[subscript c].
|
| 650 |
|
0 |
|a Energy-band theory of solids
|0 http://id.loc.gov/authorities/subjects/sh85043122
|
| 650 |
|
0 |
|a Free electron theory of metals
|0 http://id.loc.gov/authorities/subjects/sh85051660
|
| 650 |
|
0 |
|a Amorphous substances
|x Electric properties.
|
| 650 |
|
0 |
|a Semiconductors
|0 http://id.loc.gov/authorities/subjects/sh85119903
|
| 650 |
|
7 |
|a Amorphous substances
|x Electric properties.
|2 fast
|0 http://id.worldcat.org/fast/fst00807857
|
| 650 |
|
7 |
|a Energy-band theory of solids.
|2 fast
|0 http://id.worldcat.org/fast/fst00910269
|
| 650 |
|
7 |
|a Free electron theory of metals.
|2 fast
|0 http://id.worldcat.org/fast/fst00933862
|
| 650 |
|
7 |
|a Semiconductors.
|2 fast
|0 http://id.worldcat.org/fast/fst01112198
|
| 850 |
|
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|a ICU
|
| 901 |
|
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|a ToCBNA
|
| 903 |
|
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|a HeVa
|
| 929 |
|
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|a cat
|
| 999 |
f |
f |
|i f9e3146e-8501-5175-8efd-b55ea45ebaaf
|s 42433b8a-7469-54a9-af7f-5a8fa42db5ad
|
| 928 |
|
|
|t Library of Congress classification
|a QC176.8.E4M660 1993
|l JCL
|c JCL-Sci
|i 2740606
|
| 927 |
|
|
|t Library of Congress classification
|a QC176.8.E4M660 1993
|l JCL
|c JCL-Sci
|e CRERAR
|b 39553676
|i 2914435
|
