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4337061 |
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20031020110000.0 |
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000407s2000 gw a b 001 0 eng |
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|a 00030071
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020 |
|
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|a 3540665056 (alk. paper)
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035 |
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|a DCLC0030071-B
|
035 |
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|a 90069758
|
040 |
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|a DLC
|c DLC
|d OCoLC
|d OrLoB-B
|
042 |
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|a pcc
|
050 |
0 |
0 |
|a TA1700
|b .N35 2000
|
100 |
1 |
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|a Nakamura, Shuji,
|d 1954-
|0 http://id.loc.gov/authorities/names/n97010137
|1 http://viaf.org/viaf/117303471
|
245 |
1 |
4 |
|a The blue laser diode :
|b the complete story /
|c Shuji Nakamura, Stephen Pearton, Gerhard Fasol.
|
250 |
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|a 2nd updated and extended ed.
|
260 |
|
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|a Berlin ;
|a New York :
|b Springer,
|c 2000.
|
300 |
|
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|a xvi, 368 p. :
|b ill. (some col) ;
|c 24 cm.
|
336 |
|
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|a text
|b txt
|2 rdacontent
|0 http://id.loc.gov/vocabulary/contentTypes/txt
|
337 |
|
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|a unmediated
|b n
|2 rdamedia
|0 http://id.loc.gov/vocabulary/mediaTypes/n
|
338 |
|
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|a volume
|b nc
|2 rdacarrier
|0 http://id.loc.gov/vocabulary/carriers/nc
|
504 |
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|a Includes bibliographical references (p. 347-360) and index.
|
505 |
0 |
0 |
|g 1.
|t Introduction --
|g 2.
|t Background --
|g 3.
|t Physics of Gallium Nitride and Related Compounds --
|g 4.
|t GaN Growth --
|g 5.
|t p-Type GaN Obtained by Electron Beam Irradiation --
|g 6.
|t n-Type GaN --
|g 7.
|t p-Type GaN --
|g 8.
|t InGaN --
|g 9.
|t Zn and Si Co-Doped InGaN/AlGaN Double-Heterostructure Blue and Blue-Green LEDs --
|g 10.
|t InGaN Single-Quantum-Well LEDs --
|g 11.
|t Room-Temperature Pulsed Operation of Laser Diodes --
|g 12.
|t Emission Mechanisms of LEDs and LDs --
|g 13.
|t Room Temperature CW Operation of InGaN MQM LDs --
|g 14.
|t Latest Results: Lasers with Self-Organized InGaN Quantum Dots --
|g 15.
|t Conclusions.
|
650 |
|
0 |
|a Semiconductor lasers.
|0 http://id.loc.gov/authorities/subjects/sh85119896
|
650 |
|
0 |
|a Light emitting diodes.
|0 http://id.loc.gov/authorities/subjects/sh85076892
|
650 |
|
0 |
|a Gallium nitride.
|0 http://id.loc.gov/authorities/subjects/sh96005578
|
650 |
|
0 |
|a Diodes, Semiconductor.
|0 http://id.loc.gov/authorities/subjects/sh85038108
|
650 |
|
7 |
|a Blue light.
|2 fast
|0 http://id.worldcat.org/fast/fst00834966
|
650 |
|
7 |
|a Diodes, Semiconductor.
|2 fast
|0 http://id.worldcat.org/fast/fst00894049
|
650 |
|
7 |
|a Gallium nitride.
|2 fast
|0 http://id.worldcat.org/fast/fst00937295
|
650 |
|
7 |
|a Light emitting diodes.
|2 fast
|0 http://id.worldcat.org/fast/fst00998542
|
650 |
|
7 |
|a Semiconductor lasers.
|2 fast
|0 http://id.worldcat.org/fast/fst01112170
|
700 |
1 |
|
|a Pearton, S. J.
|0 http://id.loc.gov/authorities/names/n86011777
|1 http://viaf.org/viaf/19756228
|
700 |
1 |
|
|a Fasol, Gerhard.
|0 http://id.loc.gov/authorities/names/n88134480
|1 http://viaf.org/viaf/192414
|
901 |
|
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|a ToCBNA
|
903 |
|
|
|a HeVa
|
035 |
|
|
|a (OCoLC)45388502
|
929 |
|
|
|a cat
|
999 |
f |
f |
|i c87ad0c1-b4ba-5325-8b47-d8fed0a9741d
|s 7f535e17-f15d-5f5f-a0ba-00dad384171a
|
928 |
|
|
|t Library of Congress classification
|a TA1700.N35 2000
|l JCL
|c JCL-Sci
|i 4489644
|
927 |
|
|
|t Library of Congress classification
|a TA1700.N35 2000
|l JCL
|c JCL-Sci
|e MAYB
|e CRERAR
|b 56435013
|i 6922721
|