Semiconductor quantum dots : physics, spectroscopy, and applications /

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Bibliographic Details
Imprint:	Berlin ; New York : Springer, c2002.
Description:	xx, 486 p. : ill. ; 25 cm.
Language:	English
Series:	Nanoscience and technology
Subject:	Quantum dots. Quantum dots.
Format:	Print Book
URL for this record:	http://pi.lib.uchicago.edu/1001/cat/bib/4818594

Hidden Bibliographic Details
Other authors / contributors:	Masumoto, Y. (Yasuaki), 1948- Takagahara, T. (Toshihide), 1950-
ISBN:	3540428054 (alk. paper)
Notes:	Includes bibliographical references and index.

Table of Contents:

1. Growth of Self-Organized Quantum Dots
1.1. Introduction
1.2. Fabrication Techniques of Quantum Dots
1.2.1. Quantum Dot Fabrication by Lithographic Techniques
1.2.2. Self-Organized Quantum Dot Fabrication
1.3. Ordering of Three-Dimensional Islands
1.3.1. Structural Characterization of Quantum Dots
1.3.2. Ordering of Quantum Dot Position
1.4. Real-Time Monitoring of Self-Organized Quantum Dot Formation
1.4.1. Reflection High-Energy Electron Diffraction in Molecular Beam Epitaxy
1.4.2. Optical in situ Measurement in Metal-Organic Vapor-Phase Epitaxy
References
2. Excitonic Structures and Optical Properties of Quantum Dots
2.1. Introduction
2.2. Quantum and Dielectric Confinement Effect
2.3. Nonlocal Response Theory of Radiative Decay Rate of Excitons in Quantum Dots: Size Dependence and Temperature Dependence
2.3.1. Formulation
2.3.2. Size Dependence of Excitonic Radiative Decay Rate
2.3.3. Effect of Homogeneous Broadening on Excitonic Radiative Decay Rate
2.4. Electron-Hole Exchange Interaction in Degenerate Valence Band Structures
2.4.1. Formulation
2.4.2. Exciton Doublet Structures
2.4.3. Polarization Characteristics of Exciton Doublets
2.5. Enhancement of Excitonic Optical Nonlinearity in Quantum Dot Arrays
2.5.1. Exciton Band Structure in Quantum Dot Arrays
2.5.2. Excitonic Optical Nonlinearity of Quantum Dot Arrays
2.5.3. Tolerance Limits for the Fluctuation of Structure Parameters of the Quantum Dot Array
2.5.4. The Polariton Effect and Photonic Band Structures
2.6. Summary
Appendix A. Expression of Depolarization Field
Appendix B. Depolarization Field in the Presence of a Background Dielectric Constant
Appendix C. Vector Spherical Harmonics
Appendix D. Parameter Related to the Electron-Hole Exchange Energies
References
3. Electron-Phonon Interactions in Semiconductor Quantum Dots
3.1. Introduction
3.2. Energy Spectra of Acoustic Phonon Modes in Spherical Nanocrystals
3.2.1. The Case of the Stress-Free Boundary Condition
3.2.2. The Case of Smooth Contact Between a Quantum Dot and the Surrounding Medium
3.3. Derivation of the Electron-Acoustic-Phonon Interactions
3.4. Derivation of Electron-Polar-Optical-Phonon Interaction in Quantum Dots
3.5. A Formal Theory on the Exciton-Phonon System Within the Franck-Condon Approximation
3.6. Luminescence Stokes Shift and Huang-Rhys Factor
3.7. Summary
Appendix A. Strain Tensor Components in General Orthogonal Curvilinear Coordinates
Appendix B. Vector Spherical Harmonics
References
4. Micro-Imaging and Single Dot Spectroscopyof Self-Assembled Quantum Dots
4.1. Introduction
4.2. How to Get Access to a Single Quantum Dot
4.3. Observation Energy Dependence and Optical Anisotropy
4.3.1. Mechanism for Optical Anisotropy
4.3.2. Optical Anisotropy of Individual Quantum Dots
4.4. Many Carrier Effects
4.4.1. State Filling Effects Studied by Micro-Imaging
4.4.2. Multiexciton States
4.4.3. Biexciton Binding Energy
4.5. Temperature Dependence
4.5.1. Band Gap Energy Shift
4.5.2. Thermal Activation
4.5.3. Study of Thermal Activation by Micro-Photoluminescence Images
4.6. Fluorescence Intermittency
4.6.1. Micro-Photoluminescence Images of Blinking Dots
4.6.2. Random Telegraph Signals in Various Systems
4.6.3. Random or Correlated?
4.6.4. Excitation Power Dependence
4.6.5. Origin of Fluorescence Intermittency in Inp Self-Assembled Dots
4.6.6. Experimental Verification of the Model187
4.7. Some Other Interesting Phenomena
4.7.1. External Electric Field Effects
4.7.2. Magnetic Micro-Photoluminescence Spectra
4.7.3. Fine Splitting by Anisotropic Strain
4.7.4. Time Domain and Nonlinear Measurements
4.8. Summary
References
5. Persistent Spectral Hole Burning in Semiconductor Quantum Dots
5.1. Introduction
5.2. Precursor and Discovery of the Persistent Spectral Hole-Burning Phenomenon
5.3. Persistent Spectral Hole Burning, Hole Filling, and Their Mechanism
5.4. Luminescence Hole Burning and Charged Exciton Complexes
5.5. Photostimulated Luminescence, Luminescence Blinking, and Spectral Diffusion
5.6. Application of Persistent Spectral Hole Burning to Site-Selective Spectroscopy
5.7. Summary
References
6. Dynamics of Carrier Relaxation in Self-Assembled Quantum Dots
6.1. Introduction
6.2. Experimental Details
6.3. Photoluminescence Spectra in External Electric Field
6.4. Physical Mechanisms
6.4.1. Model of Selective Photoluminescence Quenching
6.5. Kinetics
6.6. Acoustic Phonon Resonances
6.7. Auger-Like Processes
6.8. Conclusion
References
7. Resonant Two-Photon Spectroscopy of Quantum Dots
7.1. Introduction
7.2. Electronic Structure of Cds(Se) Quantum Dots
7.2.1. Two-Photon Absorption Techniques
7.2.2. The Line-Narrowing Technique
7.2.3. Analysis of RHRS and RSHS Excitation Spectra
7.3. Energy Structure of Low-Energy Confined Excitons in CuCl Quantum Dots
7.4. Exciton-Phonon Interaction in CuBr and CuCl Quantum Dots
7.4.1. CuBr Quantum Dots: Coupled Exciton-LO-Phonon States
7.4.2. CuCl Quantum Dots: Size Dependence of the Exciton-LO-Phonon Interaction
7.4.3. CuCl Quantum Dots: Softening of LO Phonons in the Presence of an Exciton
7.5. Determination of the Orientation of CuCl Nanocrystals in a NaCl Matrix
7.6. Single Nanocrystal Luminescence by Two-Photon Excitation
7.7. Conclusion
References
8. Homogeneous Width of Confined Excitons in Quantum Dots -Experimental
8.1. Introduction
8.2. Spectral Hole Burning and Fluorescence Line Narrowing
8.3. Single Quantum Dot Spectroscopy
8.4. Photon Echo
8.5. Accumulated Photon Echo
8.5.1. Accumulated Photon Echo and Persistent Hole Burning
8.5.2. Phase-Modulation Technique of the Accumulated Photon Echo -Application to Quantum Dots
8.5.3. Accumulated Photon Echo Signal and the Homogeneous Width of CuCl Quantum Dots
8.5.4. Accumulated Photon Echo Signal and the Homogeneous Width of CdSe Quantum Dots
8.5.5. Lowest-Temperature Accumulated Photon Echo Signal and Homogeneous Width
8.5.6. Summary of the Accumulated Photon Echo of Quantum Dots
8.6. Coherency Measurements
References
9. Theory of Exciton Dephasing in Semiconductor Quantum Dots
9.1. Introduction
9.2. Green Function Formalism of Exciton Dephasing Rate
9.3. Exciton-Phonon Interactions
9.4. Excitons in Anisotropic Quantum Disks
9.5. Temperature-Dependence of the Exciton Dephasing Rate
9.6. Elementary Processes of Exciton Pure Dephasing
9.7. Mechanisms of Population Decay of Excitons
9.7.1. Phonon-Assisted Population Relaxation
9.7.2. Phonon-Assisted Exciton Migration
9.8. Correlation Between Temperature Dependence of Exciton Dephasing Rate and Strength of Quantum Confinement
9.9. Polarization Relaxation of Excitons
9.10. Photoluminescence Spectrum under Selective Excitation
9.11. Summary and Discussion
References
10. Excitonic Optical Nonlinearity and Weakly Correlated Exciton-Pair States
10.1. Introduction
10.2. Exciton States
10.2.1. Formulation
10.2.2. Configuration Interaction in a Truncated Basis
10.2.3. Variational Approach
10.2.4. Kayanuma's Correlated Basis Set
10.3. Biexciton States
10.3.1. Variational Approach
10.3.2. Exciton-Exciton Product State Basis
10.3.3. Electron-Hole Exchange Interaction
10.4. Exciton and Biexciton Energy Levels: The Case of Cucl
10.5. Transition Dipole Moments
10.5.1. Formulation
10.5.2. Results for Cucl
10.6. Weakly Correlated Exciton Pair States
10.7. Nonlinear Optical Properties
10.7.1. Size Dependence of the Third-Order Nonlinear Susceptibility
10.7.2. Excited State Absorption from the Exciton Ground State
10.7.3. Experimental Observation of the Weakly Correlated Exciton Pair States
10.7.4. Recent Progress in Nonlinear Nano-Optics
10.8. Summary and Conclusions
Appendix A. Two-Particle States with L = 1, 2
Appendix B. Electron-Hole Exchange Interaction
References
11. Coulomb Effects in the Optical Spectra of Highly Excited Semiconductor Quantum Dots
11.1. Introduction
11.2. Local Density Approximation for Electrons and Holes
11.3. Application of the Local Density Approximation to Quantum Dots
11.3.1. Spherical Approximation
11.3.2. Cylindrical Quantum Dots
11.4. Beyond the Local Density Approximation: Spectral Broadening and Relaxation by Coulomb Scattering
11.5. Spin Fine Structure of a Few Exciton Spectra: the Configuration Interaction Approach
11.6. Conclusions
References
12. Device Applications of Quantum Dots
12.1. Improvements of Characteristics in Quantum Dot Devices
12.1.1. Thermal Broadening in Bulk and Quantum Well Semiconductors
12.1.2. Density of States in Quantum Nanostructures
12.1.3. Other Characteristic Changes of Quantum Dots for Device Applications
12.1.4. Required Quantum Dots Dimensions for Device Applications
12.1.5. Required Characteristics for Quantum Dot Optical Devices
12.1.6. Advantages of Self-Assembled Quantum Dots
12.2. Optical Devices with Quantum Dots
12.2.1. Quantum Dot Lasers with Improved Temperature Characteristics
12.2.2. Lasing Wavelength Control in Quantum Dot Lasers
12.2.3. Reduction of Threshold Current Density in Quantum Dot Lasers
12.2.4. Vertical-Cavity Surface-Emitting Lasers with Quantum Dots
12.2.5. Miscellaneous Improvements in Quantum Dot Lasers
12.2.6. Other Optical Devices
12.3. Future of Quantum Dot Devices
12.3.1. Ideal Quantum Dot Structures for Device Applications
12.3.2. Ultimate Device Performances with Quantum Dots
References
Index481

Semiconductor quantum dots : physics, spectroscopy, and applications /

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