Long-wavelength infrared semiconductor lasers /
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| Imprint: | Hoboken, N.J. : Wiley, c2004. |
|---|---|
| Description: | xv, 395 p. : ill. ; 25 cm. |
| Language: | English |
| Series: | Wiley series in lasers and applications |
| Subject: | |
| Format: | Print Book |
| URL for this record: | http://pi.lib.uchicago.edu/1001/cat/bib/5161652 |
Table of Contents:
- Preface
- Acknowledgments
- Contributors
- 1.. Coherent Semiconductor Sources in the Long-Wavelength Infrared Spectrum
- 1.1. Introduction
- 1.2. Synopsis of Long-Wavelength Coherent Semiconductor Sources
- 1.2.1. Interband Lasers
- 1.2.2. Intersubband Quantum Cascade Lasers
- 1.2.3. Hot-Hole Lasers
- 1.2.4. Photomixers
- 1.2.5. Plasmon Emitters
- 1.3. Scope of Book
- References
- 2.. 2-[mu]m Wavelength Lasers Employing InP-based Strained-Layer Quantum Wells
- 2.1. Introduction
- 2.2. Material Properties of InGaAsP
- 2.2.1. Composition Dependence of Band-Gap Energy and Lattice Constant
- 2.2.2. Miscibility Gap
- 2.3. Design Consideration of MQW Active Region
- 2.3.1. Strain and Quantum Size Effects
- 2.3.2. Critical Layer Thickness for Strained-Layer Heterostructures
- 2.3.3. Effects of Well Strain and Barrier Height on Lasing Characteristics
- 2.4. Growth and Characterization of Strained-InGaAs Quantum Wells
- 2.4.1. InGaAs/InGaAs Multiple Quantum Wells
- 2.4.2. InGaAs/InGaAsP Multiple Quantum Wells
- 2.5. Lasing Characteristics of 2-[mu]m Wavelength InGaAs-MQW Lasers
- 2.5.1. Fabry-Perot Lasers
- 2.5.2. Distributed-Feedback Lasers
- 2.6. Conclusions and Future Prospects
- Acknowledgments
- References
- 3.. Antimonide Mid-IR Lasers
- 3.1. Introduction
- 3.2. Antimonide III-V Material System
- 3.3. Antimonide Lasers Emitting in the 2[mu]m [less than sign lambda less than sign] 3 [mu]m Rang
- 3.3.1. Historical Development
- 3.3.2. State of the Art
- 3.4. Antimonide Lasers Emitting in the [lambda greater than or equal] 3 [mu]m Range
- 3.4.1. Historical Development
- 3.4.2. Double-Heterostructure Lasers
- 3.4.3. Type-I Quantum-Well Lasers
- 3.4.4. Type-II Quantum-Well Lasers
- 3.4.5. Interband Cascade Lasers
- 3.5. Challenges and Issues
- 3.5.1. Antimonide Growth Immaturity
- 3.5.2. Nonradiative Recombination and Threshold
- 3.5.3. Linewidth Enhancement Factor (LEF)
- 3.5.4. Single-Mode Operation and Wavelength Tuning
- 3.5.5. Beam Quality
- 3.5.6. Thermal Management and Thermal Conductivity
- 3.6. Conclusions
- References
- 4.. Lead-Chalcogenide-based Mid-Infrared Diode Lasers
- 4.1. Introduction
- 4.2. Homostructure Lasers
- 4.2.1. Material Properties
- 4.2.2. Device Fabrication
- 4.2.3. Device Characterization
- 4.3. Double-Heterostructure Lasers
- 4.3.1. Pb[subscript 1-x]Eu[subscript x]Se[subscript y]Te[subscript 1-y] Lasers
- 4.3.2. Pb[subscript 1-x]Eu[subscript x]Se and Pb[subscript 1-x]Sr[subscript x]Se Lasers
- 4.3.3. Pb[subscript 1-x]Sn[subscript x]Te and PbSnSeTe/PbSe Lasers
- 4.3.4. Alternative Cladding Layer Materials
- 4.3.5. Quality Control Programs at Laser Components
- 4.3.6. High-Temperature Operation of Double-Heterostructure Lasers
- 4.3.7. Index-Guided Double-Heterostructure Lasers
- 4.4. Quantum-Well Lasers
- 4.5. DFB and DBR Lasers
- 4.5.1. Introduction
- 4.5.2. Experimental Work
- 4.6. IV-VI Epitaxy on BaF[subscript 2] and Silicon
- 4.6.1. Introduction
- 4.6.2. Growth and Characterization of IV-VI Layers on BaF[subscript 2]
- 4.6.3. Growth and Characterization of IV-VI Layers on Silicon
- 4.7. Conclusion
- Acknowledgments
- References
- 5.. InP and GaAs-based Quantum Cascade Lasers
- 5.1. Introduction
- 5.1.1. Quantum Engineering
- 5.1.2. Organization of the Chapter
- 5.2. Quantum Cascade Laser Fundamentals
- 5.2.1. History
- 5.2.2. Unipolarity and Cascading
- 5.2.3. Intersubband Transitions
- 5.3. Fundamentals of the Three-Quantum-Well Active-Region Device
- 5.3.1. Active Region
- 5.3.2. Doping and Injection/Relaxation Region
- 5.3.3. Threshold Current Density
- 5.3.4. Effect of Cascading on the Performances of QC Lasers
- 5.4. Waveguide and Technology
- 5.4.1. Waveguide
- 5.4.2. Processing
- 7.4. Antenna Design
- 7.4.1. Resonant Designs
- 7.4.2. Broadband Distributed Designs
- 7.5. Applications
- 7.5.1. Local Oscillators
- 7.5.2. Transceiver for Spectroscopy
- 7.6. Summary
- Acknowledgments
- References
- Index
