Ferroelectric thin films : basic properties and device physics for memory applications /

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Bibliographic Details
Imprint:Berlin ; New York : Springer, c2005.
Description:1 online resource (xiii, 244 p.) : ill.
Language:English
Series:Topics in applied physics, 0303-4216 ; v. 98
Topics in applied physics ; v. 98.
Subject:
Format: E-Resource Book
URL for this record:http://pi.lib.uchicago.edu/1001/cat/bib/8876606
Hidden Bibliographic Details
Other authors / contributors:Okuyama, Masanori, 1946-
Ishibashi, Yoshihiro.
ISBN:9783540314790
3540314792
9783540241638 (hbk.)
3540241639 (hbk.)
6611390200
9786611390204
Notes:Includes bibliographical references and index.
Description based on print version record.
Other form:Print version: Ferroelectric thin films. Berlin ; New York : Springer, c2005 3540241639 9783540241638
Description
Summary:

Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.

Physical Description:1 online resource (xiii, 244 p.) : ill.
Bibliography:Includes bibliographical references and index.
ISBN:9783540314790
3540314792
9783540241638
3540241639
6611390200
9786611390204
ISSN:0303-4216
;