Physical models of semiconductor quantum devices /

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Bibliographic Details
Author / Creator:Fu, Ying, 1964- author.
Edition:Second edition.
Imprint:Dordrecht : Springer, [2013?]
©2014
Description:1 online resource (xi, 408 pages) : illustrations
Language:English
Subject:
Format: E-Resource Book
URL for this record:http://pi.lib.uchicago.edu/1001/cat/bib/11080227
Hidden Bibliographic Details
ISBN:9789400771741
9400771746
9400771738
9789400771734
9789400771734
Notes:Includes bibliographical references and index.
Online resource; title from PDF title page (SpringerLink, viewed Sep. 6, 2013).
Summary:Physical Models of Semiconductor Quantum Devices addresses three main areas of solid state electronics: electronic and optical properties of low dimensional semiconductor materials; the principal physics of quantum electronic devices; and the principal physics of quantum optical devices. The link between the basic physics on which the real devices are based and the output from these devices is closely observed. The result is a detailed overview of the new material properties on which novel solid state electronic devices such as quantum diodes, small size transistors, and high electron mobility transistors are based. It provides an insight into the state-of the-art in material and device research that will be of interest to all involved in compound semiconductors.
Other form:Print version: Fu, Ying. Physical Models of Semiconductor Quantum Devices. Dordrecht : Springer, ©2013 9789400771734
Standard no.:10.1007/978-94-007-7174-1