Emerging non-volatile memories /

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Bibliographic Details
Imprint:New York : Springer, [2014]
©2014
Description:1 online resource : illustrations
Language:English
Subject:
Format: E-Resource Book
URL for this record:http://pi.lib.uchicago.edu/1001/cat/bib/11089713
Hidden Bibliographic Details
Other authors / contributors:Hong, Seungbum, editor.
Auciello, Orlando, editor.
Wouters, Dirk J., editor.
ISBN:9781489975379
1489975373
1489975365
9781489975362
9781489975362
Notes:Includes bibliographical references.
Online resource; title from PDF title page (Ebsco, viewed November 20, 2014).
Summary:This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers? understanding of future trends in non-volatile memories.
Other form:Printed edition: 9781489975362
Standard no.:10.1007/978-1-4899-7537-9