Hidden Bibliographic Details
| Other authors / contributors: | Kostamovaara, Juha.
Vainshtein, Sergey.
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| ISBN: | 9812563954
9789812563958
9812703330
9789812703330
1281372927
9781281372925
9786611372927
661137292X
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| Digital file characteristics: | data file
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| Notes: | Includes bibliographical references and indexes.
English.
Print version record.
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| Summary: | Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experi.
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| Other form: | Print version: Levinshteĭn, M.E. (Mikhail Efimovich). Breakdown phenomena in semiconductors and semiconductor devices. New Jersey ; London : World Scientific, ©2005 9812563954
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