Breakdown phenomena in semiconductors and semiconductor devices /
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| Author / Creator: | Levinshteĭn, M. E. (Mikhail Efimovich) |
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| Imprint: | New Jersey ; London : World Scientific, ©2005. |
| Description: | 1 online resource (xiii, 208 pages) : illustrations. |
| Language: | English |
| Series: | Selected topics in electronics and systems ; v. 36 Selected topics in electronics and systems ; v. 36. |
| Subject: | |
| Format: | E-Resource Book |
| URL for this record: | http://pi.lib.uchicago.edu/1001/cat/bib/11159157 |
| Summary: | Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices.The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis. |
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| Physical Description: | 1 online resource (xiii, 208 pages) : illustrations. |
| Bibliography: | Includes bibliographical references and indexes. |
| ISBN: | 9812563954 9789812563958 9812703330 9789812703330 1281372927 9781281372925 9786611372927 661137292X |