X-ray scattering from semiconductors /

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Bibliographic Details
Author / Creator:Fewster, Paul F.
Imprint:London : Imperial College Press, 2000.
Description:1 online resource (287 pages) : illustrations
Language:English
Subject:
Format: E-Resource Book
URL for this record:http://pi.lib.uchicago.edu/1001/cat/bib/11169970
Hidden Bibliographic Details
ISBN:9781848160477
184816047X
1860941591
9781860941597
Notes:Includes bibliographical references.
Print version record.
Summary:X-ray scattering is used extensively to provide detailed structural information about materials. Semiconductors have benefited from X-ray scattering techniques as an essential feedback method for crystal growth, including compositional and thickness determination of thin layers. The methods have been developed to reveal very detailed structural information concerning material quality, interface structure, relaxation, defects, surface damage, etc. This book provides a thorough description of the techniques involved in obtaining that information, including X-ray diffractometers and their associated instrument functions, data collection methods, and the simulation of the diffraction patterns observed. Also presented are examples and procedures for interpreting the data to build a picture of the sample, much of which will be common to materials other than semiconductors.
Other form:Print version: Fewster, Paul F. X-ray scattering from semiconductors. London : Imperial College Press, 2000 1860941591