Charge-trapping non-volatile memories. volume 2, Emerging materials and structures /

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Bibliographic Details
Imprint:Cham, Switzerland : Springer, [2017]
©2017
Description:1 online resource
Language:English
Subject:
Format: E-Resource Book
URL for this record:http://pi.lib.uchicago.edu/1001/cat/bib/11271545
Hidden Bibliographic Details
Varying Form of Title:Emerging materials and structures
Other authors / contributors:Dimitrakis, Panagiotis, editor.
ISBN:9783319487052
3319487051
9783319487038
3319487035
Notes:Includes bibliographical references and index.
Online resource; title from PDF title page (EBSCO, viewed February 23, 2017).
Summary:This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.
Other form:Print version: Charge-trapping non-volatile memories. volume 2, Emerging materials and structures. Cham, Switzerland : Springer, [2017] 3319487035 9783319487038