An introduction to time-of-flight secondary ion mass spectrometry (ToF-SIMS) and its application to materials science /

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Bibliographic Details
Author / Creator:Fearn, Sarah, author.
Imprint:San Rafael [California] (40 Oak Drive, San Rafael, CA, 94903, USA) : Morgan & Claypool Publishers, [2015]
Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) : IOP Publishing, [2015]
Description:1 online resource (various pagings) : illustrations (some color).
Language:English
Series:[IOP release 2]
IOP concise physics, 2053-2571
IOP (Series). Release 2.
IOP concise physics.
Subject:
Format: E-Resource Book
URL for this record:http://pi.lib.uchicago.edu/1001/cat/bib/11319912
Hidden Bibliographic Details
Other authors / contributors:Morgan & Claypool Publishers, publisher.
Institute of Physics (Great Britain), publisher.
ISBN:9781681740881
9781681742168
9781681740249
Notes:"Version: 20151001"--Title page verso.
"A Morgan & Claypool publication as part of IOP Concise Physics"--Title page verso.
Includes bibliographical references.
Also available in print.
Dr. Sarah Fearn is a Research Officer, Surface Analysis in the Materials Department at Imperial College London, where she conducts near-surface analysis of SOFCs and ionic conductivity measurements on nano-engineered structures. Her current research techniques include: isotope exchange, secondary ion mass spectrometry (SIMS), focused ion beam (FIB) microscopy, and low-energy ion scattering (LEIS). She received her PhD in 1999 from Imperial College London and spent nearly two years as a commercial SIMS analyst with Cascade Scientific before joining ICL in 2002.
Title from PDF title page (viewed on November 1, 2015).
Summary:This book highlights the application of Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) for high-resolution surface analysis and characterization of materials. While providing a brief overview of the principles of SIMS, it also provides examples of how dual-beam ToF-SIMS is used to investigate a range of materials systems and properties. Over the years, SIMS instrumentation has dramatically changed since the earliest secondary ion mass spectrometers were first developed. Instruments were once dedicated to either the depth profiling of materials using high-ion-beam currents to analyse near surface to bulk regions of materials (dynamic SIMS), or time-of-flight instruments that produced complex mass spectra of the very outer-most surface of samples, using very low-beam currents (static SIMS). Now, with the development of dual-beam instruments these two very distinct fields now overlap.
Target Audience:Materials scientists, researchers and engineers.
Other form:Print version: 9781681740249
Standard no.:10.1088/978-1-6817-4088-1