Ultra Clean Processing of Semiconductor Surfaces XIII.
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| Author / Creator: | Mertens, Paul W. |
|---|---|
| Imprint: | Zurich : Trans Tech Publications, 2016. |
| Description: | 1 online resource (395 pages) |
| Language: | English |
| Series: | Solid State Phenomena Vol. 255 Solid State Phenomena Vol. 255. |
| Subject: | |
| Format: | E-Resource Book |
| URL for this record: | http://pi.lib.uchicago.edu/1001/cat/bib/11384300 |
Table of Contents:
- Wet Selective SiGe Etch to Enable Ge Nanowire Formation
- Silicon Surface Passivation in HF Solutions for Improved Gate Oxide Reliability
- Surface Preparation Quality before Epitaxy our Paper's
- Study of Oxygen Concentration in TMAH Solution for Improvement of Sigma-Shaped Wet Etching Process
- The Effect of Rinsing a Germanium Surface after Wet Chemical Treatment
- Effect of Dilute Hydrogen Peroxide in Ultrapure Water on SiGe Epitaxial Process
- Surface Passivation of New Channel Materials Utilizing Hydrogen Peroxide and Hydrazine Gas
- Tris(Trimethylsilyl)Germane (Me3Si)3GeH: A Molecular Model for Sulfur Passivation of Ge(111) Surfaces
- Applications for Surface Engineering Using Atomic Layer Etching - Invited Paper
- Towards Atomic-Layer-Scale Processing of High Mobility Channel Materials in Acidic Solutions for N5 and N7 Technology Nodes
- Comparison of the Chemical Passivation of GaAs, In0.53Ga0.47As, and InSb with 1-Eicosanethiol
- Digital Etching of GaAs Materials: Comparison of Oxidation Treatments
- Thin Layer Etching of Silicon Nitride: Comparison of Downstream Plasma, Liquid HF and Gaseous HF Processes for Selective Removal after Light Ion Implantation
- Selective Etching of Silicon Oxide versus Nitride with Low Oxide Etching Rate
- Metrology for High Selective Silicon Nitride Etch
- Study on the Etching Selectivity of Oxide Films in Dry Cleaning Process with NF3 and H2O
- Titanium Nitride Hard Mask Removal with Selectivity to Tungsten in FEOL
- Analysis of Si Wet Etching Effect on Wafer Edge
- Middle of Line (MoL) Cleaning Challenges in Sub-20nm Node Device Manufacturing
- Characterization and Development of High Dose Implanted Resist Stripping Processes
- Chemical Infiltration through Deep UV Photoresist
- Efficient Photoresist Residue Removal with 172nm Excimer Radiation
- Deep Trench Isolation and through Silicon via Wetting Characterization by High-Frequency Acoustic Reflectometry
- Pattern Collapse of High-Aspect-Ratio Silicon Nanostructures - A Parametric Study
- Influence of CO2 Gas Atmosphere on the Liquid Filling of Superhydrophobic Nanostructures
- Some Critical Issues in Pattern Collapse Prevention and Repair
- Watermark-Free and Efficient Spray Clean on Hydrophobic Surface with Single-Wafer Technology
- Extended-Nanofluidic Devices and the Unique Liquid Properties - Invited Paper
- Measurement of the Frictional Force between PVA Roller Brushes and Semiconductor Wafers with Various Films Immersed in Chemicals
- Removal of Bull's Eye Signature by Optimizing Wet Cleans Recipe
- Toward CO2 Beam Cleaning of 20-nm Particles in Atmospheric Pressure
- Liquid Cell Platform to Directly Visualize Bottom-Up Assembly and Top-Down Etch Processes inside TEM
- A Study on the Electrostatic Discharge (ESD) Defect in SOH Mask Pattern Cleaning
- Post-CMP Cleaners for Tungsten at Advanced Nodes
- Advanced Cryogenic Aerosol Cleaning: Small Particle Removal and Damage-Free Performance
- Developments for Physical Cleaning Sample with High Adhesion Force Particles and Direct Measurement of its Removal Force
- Characterization of Cavitation in a Single Wafer or Photomask Cleaning Tool
- Molecular Simulation Contribution to Porous Low-k Pore Size Determination after Damage by Etch and Wet Clean Processes - Invited Paper
- Rapid Recovery Process of Plasma Damaged Porous Low-k Dielectrics by Wet Surface Modifying Treatment
- Characterization of Etch Residues Generated on Damascene Structures
- Evaluation of Post Etch Residue Cleaning Solutions for the Removal of TiN Hardmask after Dry Etch of Low-k Dielectric Materials on 45 nm Pitch Interconnects
- Optimization of Cu/Low-k Dual Damascene Post-Etch Residue and TiN Hard Mask Removal
- TiN Metal Hardmask Etch Residues Removal with AlN Etch
- High Throughput Wet Etch Solution for BEOL TiN Removal
- Impact of Dissolved Oxygen in Dilute HF Solution on Material Etch
- The Effect of Inhibitors on Co Corrosion in Alkaline Post Cu-CMP Cleaning Solutions
- Oxygen Control for Wet Clean Process on Single Wafer Platform
- Study of TiW Conditioning through Different Wet and Dry Treatments to Promote Ni Electroless Growth
- Post CMP Wet Cleaning Influence on Cu Hillocks
- Minimizing Wafer Surface Charging for Single-Wafer Wet Cleaning for 10 nm and beyond
- Silica Formation during Etching of Silicon Nitride in Phosphoric Acid
- Low Undercut Ti Etch Chemistry for Cu Bump Pillar under Bump Metallization Wet Etch Process
- Electrical Characterization of As-Processed Semiconductor Surfaces - Invited Paper
- Atomic Resolution Quality Control for Fin Oxide Recess by Atomic Resolution Profiler
- Specification of Trace Metal Contamination for Image Sensors
- Metal Removal Efficiency in High Aspect Ratio Structures
- Quantitative Analysis of Trace Metallic Contamination on III-V Compound Semiconductor Surfaces
- A Mathematical Model Forecasting HF Adsorption onto Cu-Coated Wafers as a Function of the Airborne Concentration and Moisture
- Oxidation of Si Surfaces: Effect of Ambient Air and Water Treatments on Surface Charge and Interface State Density
- Surface Optimization of Random Pyramid Textured Silicon Substrates for Improving Heterojunction Solar Cells
- 'Just-Clean-Enough': Optimization of Wet Chemical Cleaning Processes for Crystalline Silicon Solar Cells
- Progress in Cleaning and Wet Processing for Kesterite Thin Film Solar Cells
- Optimization of EUV Reticle Cleaning by Evaluation of Chemistries on Wafer-Based Mimic Test Structures
- Ultra-Trace Sulfate Ion Removal on Photomasks for Haze Reduction
- 172 nm Excimer Radiation as a Technology Accelerator for Bio-Electronic Applications
- Electrolyzed Water for Efficient Metal Removal
- Contamination Control for Wafer Container Used within 300 mm Manufacturing for Power Microelectronics
- Inline FOUP Cleaner - The New Type FOUP Cleaner for the Next Generation