Metal impurities in silicon- and germanium-based technologies : origin, characterization, control, and device impact /

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Bibliographic Details
Author / Creator:Claeys, Cor L., author.
Imprint:Cham, Switzerland : Springer, 2018.
Description:1 online resource
Language:English
Series:Springer series in materials science, 0933-033X ; volume 270
Springer series in materials science ; v. 270.
Subject:
Format: E-Resource Book
URL for this record:http://pi.lib.uchicago.edu/1001/cat/bib/11736952
Hidden Bibliographic Details
Other authors / contributors:Simoen, E. (Eddy), author.
ISBN:9783319939254
3319939254
9783319939261
3319939262
9783319939247
3319939246
Digital file characteristics:text file PDF
Notes:Includes bibliographical references and index.
Online resource; title from PDF title page (SpringerLink, viewed August 20, 2018).
Summary:This book gives a unique review of different aspects of metallic contaminations in Si and Ge-based semiconductors. All important metals are discussed including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on the electrical device performance. Several control and possible gettering approaches are addressed. The book is a reference for researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. It has an interdisciplinary nature by combining different disciplines such as material science, defect engineering, device processing, defect and device characterization and device physics and engineering.
Other form:Print version: Claeys, Cor L. Metal impurities in silicon- and germanium-based technologies. Cham, Switzerland : Springer, 2018 3319939246 9783319939247
Standard no.:10.1007/978-3-319-93925-4