Implementation of simulation program for modeling the effective resistivity of nanometer scale film and line interconnects /

Implementation of simulation program for modeling the effective resistivity of nanometer scale film and line interconnects /

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Bibliographic Details
Imprint:[Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology, [2006]
Description:1 online resource (21 unnumbered page) : illustrations.
Language:English
Series:NISTIR ; 7234
NISTIR ; 7234.
Subject:
Nanoelectromechanical systems.
Thin films -- Size effects -- Computer simulation.
Nanoelectromechanical systems.
Format: E-Resource U.S. Federal Government Document Book
URL for this record:http://pi.lib.uchicago.edu/1001/cat/bib/11861945
Hidden Bibliographic Details
Other authors / contributors:Allen, Ricky.
Blackburn, David L.
Schafft, Harry A.
Yarimbiyik, A. Emre.
Zaghloul, Mona E.
National Institute of Standards and Technology (U.S.). Semiconductor Electronics Division.
Notes:"February 2006."
Contributed record: Metadata reviewed, not verified. Some fields updated by batch processes.
Title from page [1], viewed March 7, 2007.
Includes bibliographical references.
Standard no.:GOVPUB-C13-752d1bed8ba5e339a5dbbbe7614cc375
GPO item no.:0247-D (online)
Govt.docs classification:C 13.58:7234

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