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12021451 |
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m o d |
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cr cnu|||unuuu |
| 008 |
180906s2018 sz a ob 101 0 eng d |
| 005 |
20240712202616.0 |
| 019 |
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|a 1051133768
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| 020 |
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|a 9783035734171
|q (electronic bk.)
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| 020 |
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|a 3035734178
|q (electronic bk.)
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| 020 |
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|z 9783035714173
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| 020 |
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|z 3035714177
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| 035 |
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|a (OCoLC)1050870995
|z (OCoLC)1051133768
|
| 035 |
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9 |
|a (OCLCCM-CC)1050870995
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| 040 |
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|a N$T
|b eng
|e rda
|e pn
|c N$T
|d EBLCP
|d YDX
|d N$T
|d OCLCF
|d OCLCQ
|d OCLCO
|d OCLCQ
|d K6U
|d OCLCQ
|d OCLCO
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|a MAIN
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|a QD543
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|a SCI
|x 013050
|2 bisacsh
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| 111 |
2 |
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|a International Symposium on Ultra Clean Processing of Semiconductor Surfaces
|n (14th :
|d 2018 :
|c Leuven, Belgium),
|j author.
|
| 245 |
1 |
0 |
|a Ultra clean processing of semiconductor surfaces XIV :
|b 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (14th UCPSS 2018) held in Bruges, Belgium, September 22-24, 2008 /
|c edited by Paul Mertens, Marc Meuris, Marc Heyns.
|
| 264 |
|
1 |
|a Stafa-Zuerich, Switzerland :
|b Trans Tech Publications Ltd,
|c [2018]
|
| 300 |
|
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|a 1 online resource :
|b color illustrations
|
| 336 |
|
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|a text
|b txt
|2 rdacontent
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| 337 |
|
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|a computer
|b c
|2 rdamedia
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| 338 |
|
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|a online resource
|b cr
|2 rdacarrier
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| 504 |
|
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|a Includes bibliographical references and indexes.
|
| 588 |
0 |
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|a Online resource; title from PDF title page (EBSCO, viewed October 4, 2018).
|
| 500 |
|
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|a "Selected, peer reviewed papers from the 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (14th UCPSS 2018), September 3-5, 2018, Leuven, Belgium."
|
| 505 |
0 |
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|a Intro; Ultra Clean Processing of Semiconductor Surfaces XIV; Preface; Table of Contents; Chapter 1: Keynote Paper; Industry Context for Semiconductor Wet Etch and Surface Preparation; Chapter 2: Surface Cleaning and Surface Functionalization; Surface Recombination Velocity Imaging of HF-Etched Si Wafers Using Dynamic Heterodyne Lock-In Carrierography; Organic Material Removal by Thermally Activated Ozone Gas; Carbon Removal and Native Oxide Cleaning on Si and SiGe Surfaces in Previum Chamber
|
| 505 |
8 |
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|a Vapor-Phase Deposition of N3-Containing Monolayers on SiO2 and Si3N4 for Wafer Scale BiofunctionalizationChapter 3: Surface Preparation of III-V Semiconductors; Toward the Surface Preparation of InGaAs for the Future CMOS Integration; Effect of WET treatment on Group III-V Compound Semiconductor Surface; Nanoscale Etching of GaAs and InP in Acidic H2O2 Solution: A Striking Contrast in Kinetics and Surface Chemistry; Ion Implanted Photoresist Removal by Material Loss-Free Organic Solvent; Chapter 4: Mechanical Particle Removal
|
| 505 |
8 |
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|a Removal of CrN Contamination from EUV Mask Backside Using Dry CleaningDamage-Free Cleaning of Advanced Structure Using Timely Energized Bubble Oscillation Megasonic Technology; An Observation Method of Real Contact Area during PVA Brush Scrubbing; Electrostatic Discharge Control and Visualization in Spray Nozzle; Chapter 5: Si and Ge Etching; Behavior Analysis of Si Etching Process with HF/HNO3 Mixture in Single-Spin Wafer Process; Study of the Anisotropic Wet Etching of Nanoscale Structures in Alkaline Solutions
|
| 505 |
8 |
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|a Unexpected Pyramid Texturization of n-Type Ge (100) via Electrochemical Etching: Bridging Surface Chemistry and MorphologyChapter 6: Selective SixGey Etching for Nanowire Release; Selective Wet Etching in Fabricating SiGe and Ge Nanowires for Gate-all-Around MOSFETs; SiGe vs. Si Selective Wet Etching for Si Gate-all-Around; A New Method to Fabricate Ge Nanowires: Selective Lateral Etching of Gesn:P/Ge Multi-Stacks; Chapter 7: Gate-all-Around Gate Stack Processing; Customized Chemical Compositions Adaptable for Cleaning Virtually all Post-Etch Residues
|
| 505 |
8 |
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|a Low Temperature SiGe Steam Oxide -- Aqueous Hf and NH3/NF3 Remote Plasma Etching and its Implementation as Si GAA Inner SpacerRMG Patterning by Digital Wet Etching of Polycrystalline Metal Films; Chapter 8: Non-Semiconductor Film Etching; Wet Etchants Penetration through Photoresist during Wet Patterning; Is Highly Selective Si3N4/SiO2 Etching Feasible without Phosphoric Acid?; Self-Aligned Contacting Processes for the 80 nm p-MTJ Device Fabrication by Wet Approach; Chapter 9: Wetting Drying and Pattern Collapse; Drying Stability and Critical Height of Repeating Line/Space Structures
|
| 650 |
|
0 |
|a Semiconductors
|x Surfaces
|v Congresses.
|
| 650 |
|
7 |
|a SCIENCE
|x Chemistry
|x Physical & Theoretical.
|2 bisacsh
|
| 650 |
|
7 |
|a Semiconductors
|x Surfaces.
|2 fast
|0 (OCoLC)fst01112259
|
| 655 |
|
4 |
|a Electronic books.
|
| 655 |
|
7 |
|a Conference papers and proceedings.
|2 fast
|0 (OCoLC)fst01423772
|
| 700 |
1 |
|
|a Meuris, Marc.
|
| 700 |
1 |
|
|a Heyns, Marc.
|
| 776 |
0 |
8 |
|i Print version:
|a International Symposium on Ultra Clean Processing of Semiconductor Surfaces (14th : 2018 : Leuven, Belgium) author.
|t Ultra clean processing of semiconductor surfaces XIV.
|d Stafa-Zuerich, Switzerland : Trans Tech Publications Ltd, [2018]
|z 3035714177
|z 9783035714173
|w (OCoLC)1050133342
|
| 903 |
|
|
|a HeVa
|
| 929 |
|
|
|a oclccm
|
| 999 |
f |
f |
|i ccd906c3-2d2e-5242-8a8a-bf2e8b30e421
|s 0f52cbf8-590f-5a00-9189-5f9b889e55d2
|
| 928 |
|
|
|t Library of Congress classification
|a QD543
|l Online
|c UC-FullText
|u https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=e000xna&AN=1884049
|z eBooks on EBSCOhost
|g ebooks
|i 12465763
|
