Ultra clean processing of semiconductor surfaces XIV : 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (14th UCPSS 2018) held in Bruges, Belgium, September 22-24, 2008 /

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Bibliographic Details
Meeting name:International Symposium on Ultra Clean Processing of Semiconductor Surfaces (14th : 2018 : Leuven, Belgium), author.
Imprint:Stafa-Zuerich, Switzerland : Trans Tech Publications Ltd, [2018]
Description:1 online resource : color illustrations
Language:English
Subject:
Format: E-Resource Book
URL for this record:http://pi.lib.uchicago.edu/1001/cat/bib/12021451
Hidden Bibliographic Details
Other authors / contributors:Meuris, Marc.
Heyns, Marc.
ISBN:9783035734171
3035734178
9783035714173
3035714177
Notes:"Selected, peer reviewed papers from the 14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (14th UCPSS 2018), September 3-5, 2018, Leuven, Belgium."
Includes bibliographical references and indexes.
Online resource; title from PDF title page (EBSCO, viewed October 4, 2018).
Other form:Print version: International Symposium on Ultra Clean Processing of Semiconductor Surfaces (14th : 2018 : Leuven, Belgium) author. Ultra clean processing of semiconductor surfaces XIV. Stafa-Zuerich, Switzerland : Trans Tech Publications Ltd, [2018] 3035714177 9783035714173
Table of Contents:
  • Industry Context for Semiconductor Wet Etch and Surface Preparation
  • Surface Recombination Velocity Imaging of HF-Etched Si Wafers Using Dynamic Heterodyne Lock-In Carrierography
  • Organic Material Removal by Thermally Activated Ozone Gas
  • Carbon Removal and Native Oxide Cleaning on Si and SiGe Surfaces in Previum Chamber
  • Vapor-Phase Deposition of N3-Containing Monolayers on SiO2 and Si3N4 for Wafer Scale Biofunctionalization
  • Toward the Surface Preparation of InGaAs for the Future CMOS Integration
  • Effect of WET treatment on Group III-V Compound Semiconductor Surface
  • Nanoscale Etching of GaAs and InP in Acidic H2O2 Solution: A Striking Contrast in Kinetics and Surface Chemistry
  • Ion Implanted Photoresist Removal by Material Loss-Free Organic Solvent
  • Removal of CrN Contamination from EUV Mask Backside Using Dry Cleaning
  • Damage-Free Cleaning of Advanced Structure Using Timely Energized Bubble Oscillation Megasonic Technology
  • An Observation Method of Real Contact Area during PVA Brush Scrubbing
  • Electrostatic Discharge Control and Visualization in Spray Nozzle
  • Behavior Analysis of Si Etching Process with HF/HNO3 Mixture in Single-Spin Wafer Process
  • Study of the Anisotropic Wet Etching of Nanoscale Structures in Alkaline Solutions
  • Unexpected Pyramid Texturization of n-Type Ge (100) via Electrochemical Etching: Bridging Surface Chemistry and Morphology
  • Selective Wet Etching in Fabricating SiGe and Ge Nanowires for Gate-all-Around MOSFETs
  • SiGe vs. Si Selective Wet Etching for Si Gate-all-Around
  • A New Method to Fabricate Ge Nanowires: Selective Lateral Etching of Gesn:P/Ge Multi-Stacks
  • Customized Chemical Compositions Adaptable for Cleaning Virtually all Post-Etch Residues
  • Low Temperature SiGe Steam Oxide - Aqueous Hf and NH3/NF3 Remote Plasma Etching and its Implementation as Si GAA Inner Spacer
  • RMG Patterning by Digital Wet Etching of Polycrystalline Metal Films
  • Wet Etchants Penetration through Photoresist during Wet Patterning
  • Is Highly Selective Si3N4/SiO2 Etching Feasible without Phosphoric Acid?
  • Self-Aligned Contacting Processes for the 80 nm p-MTJ Device Fabrication by Wet Approach
  • Drying Stability and Critical Height of Repeating Line/Space Structures
  • Fixed Charge Control of Silylated Surface for Stiction-Free Drying with Surface Energy Reduction Process
  • Exploring Wetting Dynamics on Superhydrophobic Nanopatterned Surfaces Using ATR-FTIR
  • Effect of 1-D Nano-Confinement on the Kinetics of a Click-Chemistry Surface Reaction Used in Biosensors
  • Cleaning of High Aspect Ratio STI Structures for Advanced Logic Devices by Implementation of a Surface Modification Drying Technique
  • Pattern Collapse-Free Drying with Sacrificial Gap Fill Polymers
  • Factors Influencing Drying Induced Pattern Collapse
  • 300 mm Wafer Development for Pattern Collapse Evaluations
  • AlCu Pitting Prevention in Post Etch Cleaning
  • Investigation of Defectivity Coming from the Back Side of Wafers during AlCu Polymer Removal Processes Performed in a Batch Spray Tool
  • Aluminum Cleaning on Single Wafer Tool: A Case Study with Diluted HF
  • Atomic Layer Deposition of TiN below 600 K Using N2H4
  • Process Parameter Control for BEOL TiN Hard Mask Etch-Back
  • BEOL Post-Etch Clean Robustness Improvement with Ultra-Diluted Hf for 28nm Node
  • Optimization of Wet Strip for Metal Void Reduction in Trench First Metal Hard Mask Back End of Line Process
  • Corrosion of Co in BEOL interconnects in dilute HF solution
  • Effect of Cleaning Chemistries on Cobalt: Surface Chemistries and Electrical Characterization
  • Optimization of Post Etch Cobalt Compatible Clean by pH and Oxidizer
  • Developing Integrated Solutions and Wet Cleans to Eliminate Tungsten Contact Attack in Sub 0x nm Nodes
  • Post-CMP Cleaners for Tungsten Advanced Nodes: 10nm and 7nm
  • Wet-Chemical Etching of Ruthenium in Acidic Ce4+ Solution
  • Versatile Aqueous Chemistry for Selective Ru or WNx Etch and Implant BARC Removal in 5- and 3-nm Applications
  • Impact of Controlled Ni Contamination on Silicon Solar Wafer Material
  • Wet Processing in State-of-the-Art Cu(In,Ga)(S,Se)2 Thin Film Solar Cells
  • Influence of VPT Treatment on Microscopic Distribution of Trace Metal Contaminants and its Effect on TXRF Measurement
  • Advanced Data Analysis Strategies for Understanding Particle Contamination in Chemical Distribution Systems
  • Determination of HCl Transport Coefficients in Real FOUP Polymers for HCl Cross-Contamination Assessment from FOUP to Wafer
  • Yield Enhancement due to Addition of Bevel Cleans at Middle of Line(MOL) Zone