Hidden Bibliographic Details
| Other uniform titles: | Di�electriques ferro�electriques int�egr�es sur silicium.
|
|---|
| Other authors / contributors: | Defaÿ, Emmanuel.
|
|---|
| ISBN: | 9781118602768
1118602765
9781118602751
1118602757
9781118602805
1118602803
9781848213135
1848213131
|
|---|
| Notes: | Adapted and updated from: Dielectriques ferroelectriques integres sur silicium, published in France by Hermes Science/Lavoisier, 2011.
Includes bibliographical references and index.
Print version record.
|
|---|
| Summary: | This book describes up-to-date technology applied to high-K materials for More Than Moore applications, i.e. microsystems applied to microelectronics core technologies. After detailing the basic thermodynamic theory applied to high-K dielectrics thin films including extrinsic effects, this book emphasizes the specificity of thin films. Deposition and patterning technologies are then presented. A whole chapter is dedicated to the major role played in the field by X-Ray Diffraction characterization, and other characterization techniques are also described such as Radio frequency characterization. An in-depth study of the influence of leakage currents is performed together with reliability discussion. Three applicative chapters cover integrated capacitors, variables capacitors and ferroelectric memories. The final chapter deals with a reasonably new research field, multiferroic thin films.
|
|---|
| Other form: | Print version: Ferroelectric dielectrics integrated on silicon. London : ISTE ; Hoboken, NJ : Wiley, 2011 9781848213135
|
|---|
