Technology computer aided design : simulation for VLSI MOSFET /

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Bibliographic Details
Imprint:	Boca Raton : CRC Press, ©2013.
Description:	1 online resource (xv, 409 pages, 15 unnumbered pages of plates) : illustrations (some color)
Language:	English
Subject:	Integrated circuits -- Very large scale integration -- Computer-aided design. Metal oxide semiconductor field-effect transistors -- Computer-aided design. Integrated circuits -- Very large scale integration -- Computer-aided design
Format:	E-Resource Book
URL for this record:	http://pi.lib.uchicago.edu/1001/cat/bib/13610164

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Other authors / contributors:	Sarkar, Chandan Kumar, editor.
ISBN:	9781466512665 1466512660 9781466512658 1466512652
Notes:	Includes bibliographical references and index. English. Print version record.
Summary:	"MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and concepts involved with the TCAD simulation of MOSFET devices. The book describes basic concepts and background related to popular commercial TCAD software as well as recent technologies to improve device performance such as multiple gate MOSFET, FINFET, SOI devices, and high-k gate material devices"--
Other form:	Print version: Technology computer aided design. Boca Raton : Taylor & Francis 2013 9781466512658

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