Electrical behaviour of defects at a thermally oxidized silicon surface,

Electrical behaviour of defects at a thermally oxidized silicon surface,

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Bibliographic Details
Author / Creator:	Whelan, M. V.
Imprint:	[Eindhoven, The Netherlands, Philips Research Laboratories, 1970]
Description:	93 p. illus. 24 cm.
Language:	English
Series:	Philips research reports. Supplements 1970, no. 6 Philips research reports. Supplements 1970, no. 6.
Subject:	Silicon crystals -- Electric properties Silica Crystals -- Defects Crystals -- Defects. Silica. Silicon crystals -- Electric properties.
Format:	Dissertations Print Book
URL for this record:	http://pi.lib.uchicago.edu/1001/cat/bib/416820

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Notes:	Thesis--Technological University, Eindhoven. Includes bibliographical references.

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Call Number:	QC1.P321 1970 no.6
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